FDS3680 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3680 Datasheet PDF : 5 Pages
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2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Typical Characteristics
40
VGS = 10V
5V
30
4.5V
4V
20
10
3.5V
0
0
2
4
6
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
1.4
VGS =4.0V
4.5V
1.2
5.0V
6.0V
10V
1
0.8
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
ID = 6A
1.8
VGS = 10V
1.4
1
0.6
0.12
0.08
0.04
ID = 3A
TA = 125oC
TA = 25oC
0.2
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
40
VDS =5V
30
20
TA = -55oC 25oC
125oC
10
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3680 Rev C (W)
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