MMBT5088LT1 데이터 시트보기 (PDF) - Leshan Radio Company

부품명

상세내역

제조사

MMBT5088LT1

Low Noise Transistors

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

MMBT5088LT1 PNP MMBT5089LT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

ON CHARACTERISTICS

DC Current Gain

(IC=100µAdc,VCE=5.0Vdc)

(IC=1.0mAdc,V CE=5.0Vdc)

(IC = 10mAdc, VCE=5.0Vdc)

Collector–Emitter Saturation Voltage

(IC=10mAdc,IB=1.0mAdc)

Base–Emitter Saturation Voltage

(IC =10mAdc,IB=1.0mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC= 500 µAdc,VCE=5.0Vdc,f=20MHz)

Collector–Base Capacitance

(VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded)

Emitter–Base Capacitance

(VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded)

Small Signal Current Gain

(IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz)

Noise Figure

(IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz)

Symbol

Min

hFE

MMBT5088

300

MMBT5089

400

MMBT5088

350

MMBT5089

450

MMBT5088

300

MMBT5089

400

VCE(sat)

—

VBE(sat)

—

fT

50

C cb

—

C eb

—

h fe

MMBT5088

350

MMBT5089

450

NF

MMBT5088

—

MMBT5089

—

Max

900

1200

—

—

—

—

0.5

0.8

—

4.0

10

1400

1800

3.0

2.0

Unit

—

Vdc

Vdc

MHz

pF

pF

—

dB

RS

~

in

en

IDEAL

TRANSISTOR

Figure 1.Transistor Noise Model

M18–2/4

Share Link: