IRF510 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명

상세내역

제조사

IRF510

Power MOSFET

Vishay Semiconductors 

IRF510, SiHF510

Vishay Siliconix

400

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

320

Crss = Cgd

Coss = Cds + Cgd

240

Ciss

160

Coss

80

0

100

91015_05

Crss

101

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

175 °C

100

25 °C

10-1

0.5

91015_07

VGS = 0 V

0.6 0.7 0.8 0.9 1.0 1.1 1.2

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 5.6 A

16

VDS = 80 V

VDS = 50 V

VDS = 20 V

12

8

4

0

0

91015_06

For test circuit

see figure 13

2

4

6

8

10

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

102

5

2

10

5

2

1

5

2

0.1

1

91015_08

Operation in this area limited

by RDS(on)

100 µs

1 ms

10 ms

TC = 25 °C

TJ = 175 °C

Single Pulse

2

5 10 2

5 102 2

5 103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91015

S-81377-Rev. A, 30-Jun-08

Share Link: