1PS302 데이터 시트보기 (PDF) - Philips Electronics
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1PS302 Datasheet PDF : 8 Pages
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Philips Semiconductors
High-speed double diode
Product specification
1PS302
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
TYP. MAX. UNIT
see Fig.3
IF = 1 mA
610
IF = 10 mA
740
IF = 50 mA
−
IF = 100 mA
−
see Fig.4
VR = 25 V
−
VR = 80 V
−
VR = 25 V; Tj = 150 °C
−
VR = 80 V; Tj = 150 °C
−
f = 1 MHz; VR = 0; see Fig.5
−
when switched from IF = 10 mA to −
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
when switched from IF = 10 mA; −
tr = 20 ns; see Fig.7
−
mV
−
mV
1.0
V
1.2
V
30
nA
0.5
µA
30
µA
100
µA
1.5
pF
4
ns
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
415
UNIT
K/W
K/W
1999 May 06
3
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