TSMBJ1006C thru TSMBJ1024C
ELECTRICAL CHARACTERISTIC @25к Unless otherwise specified
3DUDPHWHU
6\PERO
8QLWV
5DWHG
5HSHWLWLYH2II
VWDWH9ROWDJH
9'50
9ROWV
2IIVWDWH
/HDNDJH
&XUU HQW#9'50
,'50
X$
%UHDNRYHU
9ROWDJH
9%2
9ROWV
2Q6WDWH
9ROWDJH
#,7 $
97
9ROWV
%UHDNRYHU&XUUHQW
,%2
P$
/LPLW
0D[
0D[
0D[
0D[
0D[
760%-&
760%-&
760%-&
760%-&
760%-&
760%-&
760%-&
760%-&
MCC
TM
Micro Commercial Components
+ROGLQJ&XUUHQW
,+
P$
0LQ
2II6WDWH
&-
S)
7\S
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
GR-1089-CORE
500
8/20 us
IEC 61000-4-5
400
10/160 us
FCC Part 68
200
10/700 us
ITU-T K20/21
200
10/560 us
FCC Part 68
150
10/1000 us
GR-1089-CORE
100
100
50
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
Half value
0
tr
tp
TIME
Symbol
Parameter
I
VDRM
Stand-off voltage
IPP
IDRM
Leakage current at stand-off voltage
VBR
Breakdown voltage
IBR
Breakdown current
VBO
Breakover voltage
IBO
Breakover current
IBO
IH
IBR
IDRM
VT
IH
Holding current
NOTE: 1
VT
On state voltage
IPP
Peak pulse current
CO
Off-state capacitance
NOTE: 2
NOTEΚ
1. I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
7KHVXUJHUHFRYHU\ WLPH,WGRHVQRWH[FHHGPV
2IIVWDWH FDSDFLWDQFH PHDVXUHG DW I 0+] 9UPV VLJQDO 95 9GF ELDV
V
VBR
VDRM VBO
www.mccsemi.com
5HYLVLRQ