CZT31C 데이터 시트보기 (PDF) - Central Semiconductor Corp

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CZT31C

2.0W COMPLEMENTARY SILICON POWER TRANSISTOR

Central Semiconductor Corp 

NEW

CZT31C NPN

CZT32C PNP

CentralTM

Semiconductor Corp.

2.0W COMPLEMENTARY SILICON

POWER TRANSISTOR

DESCRIPTION:

POWER TM

223

SOT-223 CASE

The CENTRAL SEMICONDUCTOR CZT31C

and CZT32C types are surface mount epoxy

molded complementary silicon transistors

manufactured by the epitaxial base process,

designed for surface mounted power amplifier

applications up to 3.0 amps.

MAXIMUM RATINGS: (TA=25oC)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ,Tstg

ΘJA

100

100

5.0

3.0

6.0

1.0

2.0

-65 to +150

62.5

ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted)

UNITS

V

V

V

A

A

A

W

oC

oC/W

SYMBOL

ICES

ICEO

IEBO

BVCEO

* VCE(SAT)

* VBE(ON)

* hFE

* hFE

fT

TEST CONDITIONS

MIN

VCE=100V

VCE=60V

VEB=5.0V

IC=30mA

100

IC=3.0A, IB=375mA

VCE=4.0V, IC=3.0A

VCE=4.0V, IC=1.0A

25

VCE=4.0V, IC=3.0A

10

VCE=10V, IC=500mA, f=1.0MHz

3.0

* Pulsed, 2%D.C.

MAX

200

300

1.0

1.2

1.8

100

UNITS

µA

µA

mA

V

V

V

MHz

294

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