HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6319-B
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPS8599
PNP SILICON TRANSISTOR
Description
HMPS8599 is designed for general purpose amplifier applications.
Features
• Low Collector-Emitter Saturation Voltage
• HMPS8599 is complementary to HMPS8099
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +125 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCES Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
BVCEO
-80
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
ICEO
-
-
*hFE1
100
-
*hFE2
100
-
*hFE3
75
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
-0.6
-
fT
150
-
Cob
-
-
Max.
-
-
-
-100
-100
-100
300
-
-
-0.4
-0.3
-0.8
-
8
Unit
Test Conditions
V
V
V
nA
nA
nA
V
V
V
MHz
PF
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-10uA, IC=0
VCB=-80V, IE=0
VEB=-4V, IC=0
VCE=-60V, IB=0
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-100mA, IB=-5mA
IC=-100mA, IB=-10mA
IC=-10mA, VCE=-5V
VCE=-5V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification