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NAND04GW3C2AN6E 데이터 시트보기 (PDF) - STMicroelectronics
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NAND04GW3C2AN6E
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
STMicroelectronics
NAND04GW3C2AN6E Datasheet PDF : 51 Pages
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NAND04GA3C2A, NAND04GW3C2A
Figure 5. Read Operations
CL
E
W
AL
6 Device operations
R
RB
I/O
00h
Command
Code
tBLBH1
Address Input
30h
Command
Code Busy
1. Highest address depends on device density.
Data Output (sequentially)
Ai11016
19/51
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