STPS40M100C(2010) 데이터 시트보기 (PDF) - STMicroelectronics

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STPS40M100C
(Rev.:2010)

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS40M100C

Figure 8.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

1.E+02 IR(mA)

Tj=150 °C

Figure 9.

C(pF)

10000

1.E+01

Tj=125 °C

1.E+00

1.E-01

Tj=100 °C

Tj=75 °C

Tj=50 °C

1000

1.E-02

1.E-03

0

Tj=25 °C

VR(V)

10 20 30 40 50 60 70 80 90 100

100

1

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

F=1 MHz

Vosc=30 mVRMS

Tj=25 °C

VR(V)

10

100

Figure 10. Forward voltage drop versus

forward current (per diode)

IFM(A)

40

Figure 11. Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

35

30

25

Tj=125 °C

(Maximum values)

20

15

Tj=125 °C

(Typical values)

10

Tj=25 °C

(Maximum values)

5

VFM(V)

0

0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

Iarm (A)

70

65

60

55

50

Operating area

45

100

110

Varm (V)

120

130

Forbidden area

140

150

4/8

Doc ID 15522 Rev 3

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