BT151-650R,127 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT151-650R,127 Datasheet PDF : 12 Pages
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NXP Semiconductors
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
VRRM
repetitive peak reverse
voltage
IT(AV)
average on-state
current
half sine wave; Tmb ≤ 109 °C; see Figure 3
IT(RMS)
RMS on-state current half sine wave; Tmb ≤ 109 °C; see Figure 1; see
Figure 2
dIT/dt
rate of rise of on-state IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs
current
IGM
peak gate current
PGM
peak gate power
Tstg
storage temperature
Tj
junction temperature
ITSM
non-repetitive peak
half sine wave; tp = 8.3 ms; Tj(init) = 25 °C
on-state current
half sine wave; tp = 10 ms; Tj(init) = 25 °C; see
Figure 4; see Figure 5
I2t
PG(AV)
VRGM
I2t for fusing
average gate power
peak reverse gate
voltage
tp = 10 ms; sine-wave pulse
over any 20 ms period
Min Max Unit
-
650 V
-
650 V
-
7.5 A
-
12
A
-
50
A/µs
-
2
A
-
5
W
-40 150 °C
-
125 °C
-
132 A
-
120 A
-
72
A2s
-
0.5 W
-
5
V
25
IT(RMS)
(A)
20
15
10
5
001aaa954
16
IT(RMS)
(A)
12
8
4
001aaa999
0
10−2
10−1
1
10
surge duration (s)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
0
−50
0
50
100
150
Tmb (°C)
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
BT151-650R_5
Product data sheet
Rev. 05 — 27 February 2009
© NXP B.V. 2009. All rights reserved.
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