BC556BZL1(2000) 데이터 시트보기 (PDF) - ON Semiconductor

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BC556BZL1
(Rev.:2000)

Amplifier Transistors

ON Semiconductor 

BC556B, BC557, A, B, C, BC558B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ON CHARACTERISTICS

DC Current Gain

(IC = –10 µAdc, VCE = –5.0 V)

(IC = –2.0 mAdc, VCE = –5.0 V)

(IC = –100 mAdc, VCE = –5.0 V)

A Series Device

B Series Devices

C Series Devices

BC557

A Series Device

B Series Devices

C Series Devices

A Series Device

B Series Devices

C Series Devices

hFE

–

90

–

–

150

–

–

270

–

120

–

800

120

170

220

180

290

460

420

500

800

–

120

–

–

180

–

–

300

–

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

(IC = –10 mAdc, IB = see Note 1)

(IC = –100 mAdc, IB = –5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

(IC = –100 mAdc, IB = –5.0 mAdc)

Base–Emitter On Voltage

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

(IC = –10 mAdc, VCE = –5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS

VCE(sat)

VBE(sat)

VBE(on)

–

–

–

–

–

–0.55

–

–0.075

–0.3

–0.25

–0.7

–1.0

–0.62

–0.7

–0.3

–0.6

–0.65

–

–

–0.7

–0.82

Current–Gain – Bandwidth Product

(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)

BC556

BC557

BC558

fT

–

280

–

–

320

–

–

360

–

Output Capacitance

(VCB = –10 V, IC = 0, f = 1.0 MHz)

Noise Figure

(IC = –0.2 mAdc, VCE = –5.0 V,

RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz)

BC556

BC557

BC558

Cob

–

3.0

6.0

NF

–

2.0

10

–

2.0

10

–

2.0

10

Small–Signal Current Gain

(IC = –2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

BC557

A Series Device

B Series Devices

C Series Devices

hfe

125

–

900

125

–

260

240

–

500

450

–

900

Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.

Unit

–

V

V

V

MHz

pF

dB

–

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