13NM60N(2011) 데이터 시트보기 (PDF) - STMicroelectronics

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13NM60N
(Rev.:2011)

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STL13NM60N

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = Max rating

drain current (VGS = 0) VDS = Max rating, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source on

resistance

VGS = 10 V, ID = 5 A

Min. Typ. Max. Unit

600

V

1 µA

100 µA

100 nA

2

3

4

V

0.320 0.385 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

790

pF

-

60

- pF

3.6

pF

Coss

(1)

eq.

Output equivalent

capacitance

VDS = 0 to 480 V, VGS = 0

-

135

- pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

4.7

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 10 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 14)

30

nC

-

4

- nC

15

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 300 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Min.

-

Typ.

13

25

85

50

Max Unit

ns

ns

-

ns

ns

4/14

Doc ID 018870 Rev 1

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