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SGB15N120 데이터 시트보기 (PDF) - Infineon Technologies

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SGB15N120
Infineon
Infineon Technologies Infineon
SGB15N120 Datasheet PDF : 12 Pages
First Prev 11 12
SGP15N120 SGP15N120
SGW15N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
Power Semiconductors
11
Jul-02

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