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TP28F010-120 데이터 시트보기 (PDF) - Intel

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TP28F010-120 Datasheet PDF : 33 Pages
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E
28F010
4.4 DC Characteristics—TTL/NMOS Compatible—Commercial Products
(Continued)
Limits
Symbol
Parameter
Notes Min Typ(3) Max Unit
Test Conditions
IID
A9 Intelligent Identifier
1, 2
Current
90 200 µA A9 = VID
VPPL
VPP during Read-Only
Operations
0.00
6.5 V NOTE: Erase/Program are
Inhibited when VPP = VPPL
VPPH
VPP during Read/Write
Operations
11.40
12.60 V
VLKO VCC Erase/Write Lock
2.5
V
Voltage
NOTES:
Sampled, not 100% tested.
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, VPP = 12.0 V, T = 25 °C. These currents are
valid for all product versions (packages and speeds).
2. Not 100% tested: characterization data available.
3. “Typicals” are not guaranteed, but based on a limited number of samples from production lots.
4.5 DC Characteristics—CMOS Compatible—Commercial Products
Limits
Symbol
Parameter
Notes Min Typ(3) Max Unit
Test Conditions
ILI
Input Leakage Current
1
±1.0
µA VCC = VCC Max
VIN = VCC or VSS
ILO
Output Leakage Current
1
±10 µA VCC = VCC Max
VOUT = VCC or VSS
ICCS
VCC Standby Current
1
50 100 µA VCC = VCC Max
CE# = VCC ±0.2 V
ICC1
VCC Active Read Current
1
10
30 mA VCC = VCC Max, CE# = VIL
f = 6 MHz, IOUT = 0 mA
ICC2
VCC Programming Current 1, 2
1.0 10 mA Programming in Progress
ICC3
VCC Erase Current
1, 2
5.0 15 mA Erasure in Progress
ICC4
VCC Program Verify
1, 2
Current
5.0
15 mA VPP = VPPH
Program Verify in Progress
ICC5
VCC Erase Verify Current 1, 2
5.0
15 mA VPP = VPPH
Erase Verify in Progress
IPPS
VPP Leakage Current
1
±10 µA VPP VCC
20

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