025N10N 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
025N10N Datasheet PDF : 9 Pages
| |||
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Extremely low on-resistance R DS(on)
• High current capability
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
IPB025N10N3 G
IPB025N10N3 G
Product Summary
V DS
R DS(on),max
ID
100 V
2.5 mΩ
180 A
Package
Marking
PG-TO263-7
025N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
Unit
180
A
167
720
1000
mJ
±20
V
300
W
-55 ... 175
°C
55/175/56
Rev. 2.03
page 1
2009-12-11
Share Link: 