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025N10N 데이터 시트보기 (PDF) - Infineon Technologies
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025N10N
OptiMOS™3 Power-Transistor
Infineon Technologies
025N10N Datasheet PDF : 9 Pages
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IPB025N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
11100 14800 pF
-
1940 2580
-
69
-
t
d(on)
-
34
- ns
t
r
V
DD
=50 V,
V
GS
=10 V,
-
58
-
t
d(off)
I
D
=100 A,
R
G
=1.6
Ω
-
84
-
t
f
-
28
-
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q
gs
-
Q
gd
-
Q
sw
V
DD
=50 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
Q
g
-
V
plateau
-
Q
oss
V
DD
=50 V,
V
GS
=0 V
-
48
64 nC
27
-
42
-
155
206
4.3
-V
205
273 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
T
C
=25 °C
V
SD
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
t
rr
V
R
=50 V,
I
F
=
100A
,
Q
rr
d
i
F
/d
t
=100 A/µs
-
-
180 A
-
-
720
-
1
1.2 V
-
86
- ns
-
232
- nC
4)
See figure 16 for gate charge parameter definition
Rev. 2.03
page 3
2009-12-11
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