025N10N 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
025N10N Datasheet PDF : 9 Pages
| |||
13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
1000
IPB025N10N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=100 A pulsed
parameter: V DD
10
100
10
8
25 °C
6
100 °C
150 °C
4
2
80 V
20 V
50 V
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
110
105
0
1000
0
40
80
120
160
Q gate [nC]
16 Gate charge waveforms
V GS
Qg
100
V g s(th)
95
Q g(th)
90
-60 -20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.03
page 7
Q sw
Q gd
Q gate
2009-12-11
Share Link: 