SST39VF040 데이터 시트보기 (PDF) - Microchip Technology
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SST39VF040 Datasheet PDF : 28 Pages
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Table 8: DC Operating Characteristics -VDD = 3.0-3.6V for SST39LF010/020/040 and 2.7-
3.6V for SST39VF010/020/0401
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Power Supply Current
Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
Read2
20 mA CE#=VIL, OE#=WE#=VIH, all I/Os open
Program and Erase3
30 mA CE#=WE#=VIL, OE#=VIH
ISB
Standby VDD Current
15 µA CE#=VIHC, VDD=VDD Max
ILI
Input Leakage Current
1
µA VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10 µA VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V VDD=VDD Min
VIH
Input High Voltage
0.7VDD
V VDD=VDD Max
VIHC
Input High Voltage (CMOS) VDD-0.3
V VDD=VDD Max
VOL
Output Low Voltage
0.2
V IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
VDD-0.2
V IOH=-100 µA, VDD=VDD Min
T8.7 25023
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
Table 9: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Program/Erase Operation
100
µs
T9.1 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 10: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T10.0 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 11: Reliability Characteristics
Symbol Parameter
Minimum Specification
Units
Test Method
NEND1,2
Endurance
10,000
Cycles
JEDEC Standard A117
TDR1
Data Retention
100
Years
JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA
JEDEC Standard 78
T11.3 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating
would result in a higher minimum specification.
©2012 Silicon Storage Technology, Inc.
12
DS25023B
06/13
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