TEKT5400S(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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TEKT5400S Datasheet PDF : 6 Pages
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TEKT5400S
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
10
TEKT5400S
1
0.1
VCE = 5 V
λ = 950 nm
0.01
0.01
0.1
1
10
16707
Ee - Irradiance (mW/cm2)
Fig. 4 - Collector Light Current vs. Irradiance
10
λ = 950 nm
1
Ee =1mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.1
0.1
1
10
100
16718
VCE - Collector Ermitter Voltage (V)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
20
f = 1 MHz
16
12
8
4
0
0.1
1
10
100
94 8247
VCE - Collector Ermitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
12
10
VCE = 5 V
RL = 100 Ω
λ = 950 nm
8
6
ton
4
2
toff
0
0
4
8
12
16
94 8253
IC - Collector Current (mA)
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
700
94 8270
800
900
1000
λ - Wavelength (nm)
1100
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
16732
0.6 0.4 0.2 0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81569
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
433
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