M29W800DB70M1 데이터 시트보기 (PDF) - STMicroelectronics

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M29W800DB70M1

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

STMicroelectronics 

M29W800DT, M29W800DB

Table 5. Commands, 8-bit mode, BYTE = VIL

Bus Write Operations

Command

1st

2nd

3rd

4th

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset

1 X F0

3 AAA AA 555 55 X F0

Auto Select

3 AAA AA 555 55 AAA 90

Program

4 AAA AA 555 55 AAA A0 PA PD

Unlock Bypass

3 AAA AA 555 55 AAA 20

Unlock Bypass

Program

2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase

6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Block Erase

6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

Erase Suspend

1 X B0

Erase Resume

1 X 30

Read CFI Query

1 AA 98

Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.

All values in the table are in hexadecimal.

The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t

Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Table 6. Program, Erase Times and Program, Erase Endurance Cycles

Parameter

Min

Typ (1, 2)

Max(2)

Unit

Chip Erase

12

60(3)

s

Block Erase (64 Kbytes)

0.8

6(4)

s

Erase Suspend Latency Time

15

25(3)

µs

Program (Byte or Word)

10

200(3)

µs

Chip Program (Byte by Byte)

12

60(3)

s

Chip Program (Word by Word)

6

30(4)

s

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

20

years

Note: 1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

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