74LVC1G06-Q100(2018) 데이터 시트보기 (PDF) - NXP Semiconductors.

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74LVC1G06-Q100
(Rev.:2018)

Inverter with open-drain output

NXP Semiconductors. 

Nexperia

74LVC1G06-Q100

Inverter with open-drain output

13 Abbreviations

Table 11. Abbreviations

Acronym

CMOS

DUT

ESD

HBM

MM

TTL

Description

Complementary Metal-Oxide Semiconductor

Device Under Test

ElectroStatic Discharge

Human Body Model

Machine Model

Transistor-Transistor Logic

14 Revision history

Table 12. Revision history

Document ID

74LVC1G06_Q100 v.3

Modifications:

74LVC1G06_Q100 v.2

Modifications:

74LVC1G06_Q100 v.1

Release date Data sheet status

Change notice Supersedes

20180522

Product data sheet

-

74LVC1G06_Q100 v.2

• The format of this data sheet has been redesigned to comply with the identity guidelines of

Nexperia.

• Legal texts have been adapted to the new company name where appropriate.

20161207

Product data sheet

-

74LVC1G06_Q100 v.1

• Table 7: The maximum limits for leakage current and supply current have changed.

• Table 7: OFF-state output current parameter added.

20120807

Product data sheet

-

-

74LVC1G06_Q100

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 22 May 2018

© Nexperia B.V. 2018. All rights reserved.

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