42568WP 데이터 시트보기 (PDF) - STMicroelectronics

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42568WP

256 Kbit Serial I2C Bus EEPROM / 4256BWP / SOP8

STMicroelectronics 

DC and AC parameters

M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF

Table 14. DC characteristics (M24256-BR, M24256-DR, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition to

those in Table 7)

Min.

Max. Unit

ILI

Input leakage current

(E1, E2, SCL, SDA)

ILO Output leakage current

VIN = VSS or VCC, device in

Standby mode

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-

± 2 µA

-

± 2 µA

ICC Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

fc= 1 MHz(2)

-

0.8 mA

-

2.5 mA

ICC0 Supply current (Write)

ICC1 Standby supply current

During tW,

VCC = 1.8 V ≤VCC ≤2.5 V

Device not selected(4),

VIN = VSS or VCC, VCC = 1.8 V

Input low voltage

VIL

(SCL, SDA, WC, E2, E1,

E0)(5)

1.8 V ≤ VCC < 2.5 V

-

2(3)

mA

-

1

µA

–0.45 0.25 VCC V

Input high voltage

(SCL, SDA)

VIH Input high voltage

(WC, E2, E1, E0)(6)

1.8 V ≤ VCC < 2.5 V

1.8 V ≤ VCC < 2.5 V

0.75 VCC 6.5

V

0.75 VCC VCC+ 0.6 V

VOL Output low voltage

IOL = 1 mA, VCC = 1.8 V

-

0.2

V

1.

If the application uses the voltage range R device

please refer to Table 13 instead of this table.

with

2.5

V

<

Vcc

<

5.5

V

and

-40

°C

<

TA

<

+85

°C,

2. Only for devices identified with process letter K.

3. Characterized value, not tested in production.

4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

5. Ei inputs should be tied to Vss (see Section 2.3).

6. Ei inputs should be tied to Vcc (see Section 2.3).

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DocID6757 Rev 32

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