AP6503ASP-13 데이터 시트보기 (PDF) - Diodes Incorporated.
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AP6503ASP-13 Datasheet PDF : 15 Pages
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Functional Block Diagram
AP6503A
FB 5
SS 8
COMP 6
EN 7
+
-
1.1V
+
-
0.3 V
-
+
+
0.923 V
OVP
OSCILLATOR
RAMP
E
CURRENT
SENSE
AMPLIFIER
UVP
80/240kHz CLK
ERROR
AMPLIFIER
Logic
+
-
CURRENT
COMPARATOR
6μA
2 IN
1 BST
HS
100mΩ
3 SW
LS
100mΩ
4 GND
+
2.5V
-
+
-
0.9V
EN OK
LOCKOUT
COMPARATOR
SHUTDOWN
COMPARATOR
disable
IN < 4.10V
IN
INTERNAL
REGULATORS
5V
Figure 3. Functional Block Diagram
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
VIN
Supply Voltage
VSW
Switch Node Voltage
VBST
Bootstrap Voltage
VFB
Feedback Voltage
VEN
Enable/UVLO Voltage
VCOMP
Comp Voltage
TST
Storage Temperature
TJ
Junction Temperature
TL
Lead Temperature
ESD Susceptibility (Note 5)
HBM
Human Body Model
MM
Machine Model
Rating
Unit
-0.3 to +26
V
-1.0 to VIN +0.3
V
VSW -0.3 to VSW +6
V
-0.3V to +6
V
-0.3V to +6
V
-0.3V to +6
V
-65 to +150
°C
+150
°C
+260
°C
3
kV
250
V
Notes:
4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability
may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
AP6503A
Document number: DS36000 Rev. 4 - 2
3 of 15
www.diodes.com
March 2017
© Diodes Incorporated
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