SPN02N60C3(2004) 데이터 시트보기 (PDF) - Infineon Technologies

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SPN02N60C3
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

Rev. 2.1

SPN02N60C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 1.8 A, Tj = 125 °C

Symbol

dv/dt

Value

50

Unit

V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - soldering point

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Symbol

RthJS

RthJA

Tsold

Values

Unit

min. typ. max.

-

30

- K/W

-

110

-

-

-

70

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600

-

-V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=0.25A

-

700 -

Gate threshold voltage

VGS(th) ID=80µΑ, VGS=VDS 2.1

3

3.9

Zero gate voltage drain current IDSS

VDS=600V, VGS=0V,

µA

Tj=25°C,

-

0.5

1

Tj=150°C

-

-

50

Gate-source leakage current

IGSS

VGS=30V, VDS=0V

-

Drain-source on-state resistance RDS(on) VGS=10V, ID=1.1A,

Tj=25°C

-

Tj=150°C

-

- 100 nA

Ω

2.7

3

7.3

-

Gate input resistance

RG

f=1MHz, open Drain

-

9

-

Page 2

2004-03-01

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