BF1202WR,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1202WR,115 Datasheet PDF : 15 Pages
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NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1202,
BF1202R and BF1202WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
Marking code legend:
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF1202 marking code: LD*
Fig.1 Simplified outline
(SOT143B).
handbook, 2 co3lumns
4
2
Top view
1
MSB035
BF1202R marking code: LE*
Fig.2 Simplified outline
(SOT143R).
lfpage
3
4
2
Top view
1
MSB842
BF1202WR marking code: LE*
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
cross-modulation
Tj
operating junction temperature
CONDITIONS
f = 1 MHz
f = 800 MHz
input level for k = 1% at
40 dB AGC
MIN.
25
100
TYP.
30
1.7
15
1.1
105
MAX.
10
30
200
40
2.2
30
1.8
UNIT
V
mA
mW
mS
pF
fF
dB
dBV
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2010 Sep 16
2
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