IMSC011 데이터 시트보기 (PDF) - STMicroelectronics
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IMSC011 Datasheet PDF : 30 Pages
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IMS C011
SYMBOL
PARAMETER
MIN
MAX UNITS NOTES
VIH
High level input voltage
2.0§ VDD+0.5 V
1, 2
VIL
Low level input voltage
–0.5
0.8
V
1, 2
II
Input current
@ GND<VI<VDD
10
mA 1, 2, 3
200
mA 1, 2, 4
VOH
Output high voltage
@ IOH=2mA VDD–1
V
1, 2
VOL
Output low voltage
@ IOL=4mA
0.4
V
1, 2
IOZ
Tristate output current @ GND<V0<VDD
10
mA
1, 2
PD
Power dissipation
120
mW
2, 5
CIN
Input capacitance
@ f=1MHz
7
pF
6
COZ
Output capacitance
@ f=1MHz
10
pF
6
§For RnotW, RS0-1, SeparateIQ over temperature range –40<TA<25oC (where applicable), substi-
tute 2.2V.
Notes
1 All voltages are with respect to GND.
2 Parameters for IMS C011 measured at 4.75V<VDD<5.25V and 0oC<TA<70oC.
3 For inputs other than those in Note 4.
4 For pins 2, 3, 5, 6, 7, 9, 11, 13, 15, 16, 25.
5 Power dissipation varies with output loading.
6 Guaranteed, but not tested.
Table 7.3 DC characteristics
7.2 Equivalent circuits
IOL
1.5V
1MW
IOH
50pF
D.U.T.
GND
Note: This circuit represents the device sinking IOL and sourcing IOH with a 50pF capacitive load.
Figure 7.1 Load circuit for AC measurements
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