STD13N60M2 데이터 시트보기 (PDF) - STMicroelectronics

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STD13N60M2

MOSFET N-CH 600V 0.35Ohm 11A MDmesh II Plus

STMicroelectronics 

STB13N60M2,

STD13N60M2

N-channel 600 V, 0.35 Ω typ., 11 A

MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages

Datasheet - production data

Features

Order code

STB13N60M2

STD13N60M2

VDS@TJMAX.

650 V

RDS(on) max.

0.38 Ω

ID

11 A

Figure 1: Internal schematic diagram

D(2, TAB)

 Extremely low gate charge

 Excellent output capacitance (COSS) profile

 100% avalanche tested

 Zener-protected

Applications

 Switching applications

G(1)

S(3)

Order code

STB13N60M2

STD13N60M2

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

AM01476v1_tab

Table 1: Device summary

Marking

Package

13N60M2

D2PAK

DPAK

Packing

Tape and reel

September 2016

DocID024569 Rev 4

This is information on a product in full production.

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