STF13N60M2 데이터 시트보기 (PDF) - STMicroelectronics
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STF13N60M2
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STF13N60M2 Datasheet PDF : 14 Pages
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STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP and I PAKFP packages
Datasheet − production data
Features
3
2
1
TO-220FP
1
23
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
AM15572v1
Order codes VDS @ TJmax RDS(on) max ID
STF13N60M2
STFI13N60M2
650 V
0.38 Ω 11 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF13N60M2
STFI13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220FP
2
I PAKFP (TO-281)
Packaging
Tube
March 2014
This is information on a product in full production.
DocID023939 Rev 4
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