40N60A4D 데이터 시트보기 (PDF) - Fairchild Semiconductor
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40N60A4D Datasheet PDF : 10 Pages
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HGT1N40N60A4D
Typical Performance Curves (Unless Otherwise Specified) (Continued)
14
FREQUENCY = 1MHz
12
10
8
CIES
6
4
COES
2
CRES
0
0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250ms, TJ = 25oC
2.3
2.2
2.1
2.0
1.9
8
ICE = 80A
ICE = 40A
ICE = 20A
9
10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
50
DUTY CYCLE < 0.5%,
45 PULSE DURATION = 250ms
40
35
TJ = 125oC
30
25
20
15
TJ = 25oC
10
5
0
0
0.5
1.0
1.5
2.0
2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
120
110 dIEC/dt = 200A/µs
100
125oC trr
90
80
70
60
125oC ta
50
125oC tb
25oC trr
40
30
20
25oC ta
10
0
0
25oC tb
5
10 15 20 25 30 35 40
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
70
65
60
55
50
45
40
35
30
25
20
15
10
200
125oC ta
IF = 40A, VCE = 390V
125oC tb
25oC ta
25oC tb
300 400 500 600 700 800 900
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
1400
1200
1000
VCE = 390V
125oC, IF = 40A
800
125oC, IF = 20A
600
25oC, IF = 40A
400
200
25oC, IF = 20A
0
200
400
600
800
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
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