D669 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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D669 Datasheet PDF : 7 Pages
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2SD669, 2SD669A
Electrical Characteristics (Ta = 25°C)
2SD669
2SD669A
Item
Symbol Min Typ Max Min Typ Max
Collector to base
breakdown voltage
V(BR)CBO
180 —
—
180 —
—
Collector to emitter
breakdown voltage
V(BR)CEO
120 —
—
160 —
—
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
——
Collector cutoff current ICBO
— — 10 — — 10
DC current transfer ratio hFE1*1
60 — 320 60 — 200
hFE2
30 — — 30 — —
Collector to emitter
saturation voltage
VCE(sat)
——
1
——1
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
Cob
capacitance
— — 1.5 — — 1.5
— 140 — — 140 —
— 14 — — 14 —
Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows.
2. Pulse test.
Unit Test conditions
V
IC = 1 mA, IE = 0
V
IC = 10 mA, RBE = ∞
V
IE = 1 mA, IC = 0
µA
V
V
MHz
pF
VCB = 160 V, IE = 0
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 500 mA*2
IC = 500 mA,
IB = 50 mA*2
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 150 mA*2
VCB = 10 V, IE = 0,
f = 1 MHz
2SD669
2SD669A
B
60 to 120
60 to 120
C
100 to 200
100 to 200
D
160 to 320
—
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
3
(13.3 V, 1.5 A)
1.0
(40 V, 0.5 A)
0.3
DC Operation(TC = 25°C)
0.1
(120 V, 0.04 A)
0.03
(160 V, 0.02A)
2SD669
2SD669A
0.01
1
3
10 30 100 300
Collector to emitter voltage VCE (V)
3
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