MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes (2N6348A, 2N6349A)
• For 400 Hz Operation, Consult Factory
• 8 Ampere Devices Available as 2N6344 thru 2N6349
Order this document
by 2N6348A/D
2N6348A
2N6349A
TRIACs
12 AMPERES RMS
600 and 800 VOLTS
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = –40 to +110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6348A
2N6349A
Symbol
VDRM
Value
600
800
Unit
Volts
*RMS On-State Current
(Full Cycle Sine Wave 50 to 60 Hz)
(TC = +80°C)
(TC = +95°C)
IT(RMS)
12
6
Amps
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and Followed by Rated Current
ITSM
120
Amps
Circuit Fusing (t = 8.3 ms)
I2t
59
A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)
*Average Gate Power (TC = +80°C, t = 8.3 ms)
*Peak Gate Current
*Peak Gate Voltage
*Operating Junction Temperature Range
*Storage Temperature Range
*Indicates JEDEC Registered Data.
PGM
PG(AV)
IGM
VGM
TJ
Tstg
20
0.5
2
±10
–40 to +125
–40 to +150
Watts
Watt
Amps
Volts
°C
°C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1999