FQP12N60C(2003) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQP12N60C Datasheet PDF : 10 Pages
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Typical Characteristics
V
Top : 15.0GSV
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101 Bottom : 4.5 V
※ Notes :
100
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
V = 10V
GS
1.0
0.5
0
VGS = 20V
※ Note : TJ = 25℃
5
10
15
20
25
30
35
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
C
oss
Crss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 120V
DS
10
V = 300V
DS
8
VDS = 480V
6
4
2
※ Note : ID = 12A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, October 2003
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