FDC640P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC640P Datasheet PDF : 5 Pages
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Typical Characteristics
15
VGS = -4.5V
-3.5V
12
-3.0V
-2.5V
9
6
-2.0V
3
0
0
0.5
1
1.5
2
2.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
3
VGS = -2.0V
2.5
2
-2.5V
1.5
-3.0V
-3.5V
-4.0V
1
-4.5V
0.5
0
3
6
9
12
15
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.4
ID = -4.5 A
VGS = -4.5 V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.16
ID = -2.25 A
0.14
0.12
0.1
0.08
TA = 125oC
0.06
0.04
TA = 25oC
0.02
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
12
VDS = -5V
10
8
TA = -55oC
25oC
125oC
6
4
2
0
0.5
1
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC640P Rev E(W)
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