FS2ASJ-3 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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FS2ASJ-3 Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 4V
ID = 1A, VGS = 10V
ID = 1A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
IS = 2A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
150
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
0.58 0.75
—
0.61 0.81
—
0.58 0.75
—
4.5
—
—
360
—
—
62
—
—
16
—
—
11
—
—
9
—
—
35
—
—
13
—
—
1.0
1.5
—
—
6.25
—
65
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
2
101
7
5
3
tw = 10ms
2
100
7
5
3
2
10–1
7
5
TC = 25°C
Single Pulse
100ms
1ms
10ms
DC
3
2
23
5 7 101
23
5 7 102 2 3
5 7 103
2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
Tc = 25°C
Pulse Test
4.0
VGS = 10V
6V
3.0
4V
PD = 20W
3V
2.0
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
Tc = 25°C
Pulse Test
1.6
1.2
VGS = 10V
6V
4V
3V
2.5V
0.8
1.0
2.5V
0.4
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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