2SC2481 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC2481

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2481

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 150V(Min)

·High Current Capability

·High Collector Power Dissipation

·Complement to Type 2SA1021

APPLICATIONS

·Color TV vertical deflection output applications.

·Color TV class B sound output applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

1.5

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

1.0

A

20

W

1.2

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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