2SC2481 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2481 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2481
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
1.5
V
VBE(on) Base-Emitter On Voltage
IC= 5mA; VCE= 5V
0.8
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
1.0 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0 μA
www.iscsemi.cn hFE
DC Current Gain
IC= 0.2A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
hFE Classifications
60
20 100
13
320
MHz
pF
R
O
Y
60-120 100-200 160-320
isc Website：www.iscsemi.cn
2
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