2SC2335 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SC2335

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

DESCRIPTION

·With TO-220C package

·Collector-emitter sustaining voltage

VCEO(sus)=400V(Min)

·Collector-emitter saturation voltage

VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A

·Switching time-tf=1.0μs(Max.)@IC=3.0A

APPLICATIONS

·Designed for use in high-voltage ,high-

speed ,power switching in inductive circuit,

particularly suited for 115 and 220V switch-

mode applications such as switching

regulator’s ,inverters,,DC-DC and converter

PINNING

PIN

1

2

3

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-base voltage

VCEO

Collector-emitter voltage

VEBO

Emitter-base voltage

IC

Collector current

ICM

Collector current-peak

IB

Base current

PD

Total power dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

TC=25℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-C

Thermal resistance junction to case

Product Specification

2SC2335

·

VALUE

500

400

7

7

15

3.5

40

150

-50~150

UNIT

V

V

V

A

A

A

W

℃

℃

MAX

3.125

UNIT

℃/W

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