KF7N60P(2010) 데이터 시트보기 (PDF) - KEC
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KF7N60P Datasheet PDF : 7 Pages
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KF7N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250μA, VGS=0V
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃
IDSS
VDS=600V, VGS=0V
Vth
VDS=VGS, ID=250μA
IGSS
VGS=±30V, VDS=0V
RDS(ON)
VGS=10V, ID=3.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=7A
VGS=10V
(Note4,5)
VDD=300V
ID=7A
RG=25Ω
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=7.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=7.0A, VGS=0V,
Qrr
dIs/dt=100A/μs
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, IS=7A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤7.0A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.65
-
V/℃
-
-
10
μA
2.5
-
4.5
V
-
- ±100 nA
-
0.95 1.2
Ω
-
19
-
-
4.4
-
nC
-
7
-
-
22
-
-
25
-
ns
-
57
-
-
24
-
-
900
-
-
100
-
pF
-
7.5
-
-
-
7
A
-
-
28
-
-
1.4
V
-
320
-
ns
-
3.1
-
μC
Marking
1
1
KF7N60
KF7N60
F
001
2
P
001
2
1 PRODUCT NAME
2 LOT NO
2010. 11. 23
Revision No : 0
2/7
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