KSC2334 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KSC2334 Datasheet PDF : 4 Pages
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KSC2334
High Speed Switching Industrial Use
• Complement to KSA1010
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
PC
Collector Dissipation (TC=25°C)
Collector Dissipation (TA=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW≤300µs, Duty Cycle≤10%
1
TO-220
1.Base 2.Collector 3.Emitter
Value
150
100
7
7
15
3.5
40
1.5
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
VCEX(sus)1
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
VCEX(sus)2 Collector-Emitter Sustaining Voltage
ICBO
ICER
ICEX1
ICEX2
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
hFE3
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
Test Condition
IC = 5A, IB1= 0.5A, L = 1mH
IC = 5A, IB1 = -IB2 = 0.5A
VBE(off) = -5V, L = 180µH, Clamped
IC = 10A, IB1 =1A, IB2 = -0.5A,
VBE(off) = -5V, L = 180µH, Clamped
VCB = 100, IE = 0
VCE = 100V, RBE = 51Ω@TC =125°C
VCE = 100V, VBE(off) = -1.5V
VCE = 100V, VBE(off) = -1.5V
@ TC= 125°C
VEB = 5V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
VCE = 5V, IC = 5A
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.5A
VCC = 50V, IC = 5A
IB1 = -IB2 = 0.5A
RL = 10Ω
Min.
100
100
100
40
40
20
Max.
10
1
10
1
10
240
0.6
1.5
0.5
0.5
1.5
Units
V
V
V
µA
mA
µA
mA
µA
V
V
µs
µs
µs
hFE Classification
Classification
hFE2
©2001 Fairchild Semiconductor Corporation
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
Rev. A1, August 2001
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