TSM8N80 데이터 시트보기 (PDF) - TSC Corporation
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TSM8N80 Datasheet PDF : 10 Pages
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TSM8N80
800V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
TO-220
ITO-220
Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
0.5
3.1
62.5
oC/W
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VGS = 0V, ID = 250uA
VGS = 10V, ID = 4.0A
VDS = VGS, ID = 250uA
VDS = 800V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 30V, ID = 4.0A
IS = 8A, VGS = 0V
VDS = 640V, ID = 8A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
BVDSS
800
--
--
V
RDS(ON)
--
1.1 1.4
Ω
VGS(TH)
2.0
--
4.0
V
IDSS
--
--
10
uA
IGSS
--
-- ±100 nA
gfs
--
7
--
S
VSD
--
--
1.5
V
Qg
--
41
--
Qgs
--
10
--
nC
Qgd
--
11
--
Ciss
-- 1921 --
Coss
--
146
--
pF
Crss
--
12
--
Turn-On Delay Time
td(on)
--
133
--
Turn-On Rise Time
Turn-Off Delay Time
VGS = 10V, ID = 8A,
VDD = 400V, RG = 25Ω
tr
td(off)
--
30
--
nS
--
172
--
Turn-Off Fall Time
tf
--
37
--
Reverse Recovery Time
VGS = 0V, IS = 8A,
tfr
--
479
--
nS
Reverse Recovery Charge
dIF/dt = 100A/us
Qfr
--
5.5
--
uC
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=8A, L=5.9mH, RG=25Ω, Starting TJ=25℃
3. ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting TJ=25℃
4. Pulse test: pulse width ≤300uS, duty cycle ≤2%
5. b For design reference only, not subject to production testing.
6. c Switching time is essentially independent of operating temperature.
2/10
Version: A12
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