RN2101MFV 데이터 시트보기 (PDF) - Toshiba

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RN2101MFV

Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

RN2101MFV

-100

IC - VI(ON)

RN2101MFV∼RN2106MFV

RN2102MFV

-100

IC - VI(ON)

-10

Ta = 100°C

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE = -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

RN2103MFV

-100

IC - VI(ON)

-10

Ta = 100°C

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE = -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

RN2104MFV

-100

IC - VI(ON)

-10

Ta = 100°C

25

-1

-25

-0.1

-0.1

EMMITER COMMON

VCE = -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

RN2105MFV

-100

IC - VI(ON)

Ta = 100°C

-10

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE = -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

-10

-1

-0.1

-0.1

Ta = 100°C

25

-25

EMMITER COMMON

VCE = -0.2V

-1

-10

INPUT VOLTAGE　VI(ON) ( V)

-100

RN2106MFV

-100

IC - VI(ON)

Ta = 100°C

-10

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE = -0.2V

-1

-10

INPUT VOLTAGE　VI(ON) ( V)

-100

3

2010-04-06

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