IXKC15N60C5 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXKC15N60C5 Datasheet PDF : 4 Pages
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Advanced Technical Information
IXKC 15N60C5
1.2
TJV = 150°C
1
5.5 V
0.8
VDS = 5 V
0.6
6.5 V
10 V
6V
7V
0.4
0.2
0.5
ID = 12 A
VGS = 10 V
0.4
0.3
98%
0.2
typ
0.1
100
VDS > 2·RDS(on) max · ID
80
60
40
20
25 °C
TJ = 150 °C
0
0
10
20
30
40
50
I D [A]
0
-60 -20
20
60
100 140 180
T j [°C]
Fig. 4 Typ. drain-source on-state resistance Fig. 5 Drain-source on-state resistance
0
0
2
4
6
8
10
V GS [V]
Fig. 6 Typ. transfer characteristics
10 2
25 °C, 98%
25 °C
10 1
TJ =150 °C
150 °C, 98%
10 0
10 -1
0
0.5
1
1.5
2
V SD [V]
Fig. 7 Forward characteristic
of reverse diode
600
ID = 7.9 A
500
400
300
200
100
10
ID = 12 A pulsed
9
8
VDS = 121020VV
7
40 0V
6
5
4
3
2
1
0
0
10
20
30
40
Q gate [nC]
Fig. 8 Typ. gate charge
700
ID = 0.75 mA
660
620
580
10 5
VGS = 0 V
f = 1 MHz
10 4
Ciss
10 3
10 2
Coss
10 1
Crss
10 0
0
100
200
300
400
500
V DS [V]
Fig. 9 Typ. capacitances
10 0
0.5
0.2
10 -1
0.1
0.05
0.02
0.01
single pulse
D = tp/T
0
540
10 -2
20
60
100
140
180
-60
-20
20
60
100 140 180
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
T j [°C]
T j [°C]
t p [s]
Fig. 10 Avalanche energy
Fig. 11 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
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20090209b
4-4
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