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JCS8N65FB-O-F-N-B 데이터 시트보기 (PDF) - Jilin Sino-Microelectronics

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JCS8N65FB-O-F-N-B
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Jilin Sino-Microelectronics Hwdz
JCS8N65FB-O-F-N-B Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS8N65B
项目
Parameter
符号
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
最大脉冲漏极电流(注 1
Drain Current - pulse note 1
最高栅源电压
Gate-Source Voltage
IDM
VGSS
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2EAS
雪崩电流(注 1
Avalanche Currentnote 1
IAR
重复雪崩能量(注 1
Repetitive Avalanche Currentnote 1EAR
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dtnote 3
dv/dt
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
25
最高结温及存储温度
Operating and Storage Temperature
Range
引线最高焊接温度
TJTSTG
Maximum Lead Temperature for
TL
Soldering Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
数值
Value
JCS8N65CB JCS8N65FB
650
650
7.0
7.0*
4.3
4.3*
30
30*
±30
590
7.0
14.0
4.5
142
48
1.14
0.38
-55+150
300
单位
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
版本:201011A
2/10

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