2SB1273 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1273 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1273
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
固I电NC半HANGE SEMICONDUCTOR VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-6
-3
UNIT
V
V
V
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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