NTD80N02-001 데이터 시트보기 (PDF) - ON Semiconductor
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NTD80N02-001 Datasheet PDF : 8 Pages
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NTD80N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Positive Temperature Coefficient
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 24 Vdc)
(VGS = 0 Vdc, VDS = 24 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Negative Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 80 Adc)
(VGS = 4.5 Vdc, ID = 40 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
(VDS = 20 Vdc,
VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VGS = 4.5 Vdc,
VDD = 20 Vdc,
ID = 20 Adc,
RG = 2.5 Ω)
(VGS = 4.5 Vdc,
ID = 20 Adc,
VDS = 20 Vdc) (Note 3)
td(on)
tr
td(off)
tf
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
VSD
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 40 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
trr
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
ta
tb
Reverse Recovery Stored Charge
Qrr
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
Typ
Max
Unit
24
27
−
25
Vdc
−
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
±100 nAdc
Vdc
1.0
1.9
3.0
−
−3.8
−
mV/°C
mΩ
−
5.0
5.8
−
7.5
9.0
−
5.0
5.8
7.5
9.0
−
20
−
Mhos
−
2250
2600
pF
−
900
1100
−
400
525
−
17
30
ns
−
67
125
−
28
45
−
40
75
−
30
42
nC
−
7.0
12
−
18
28
Vdc
−
0.92
1.2
−
1.05
−
−
0.70
−
−
38
52
ns
−
20
−
−
18
−
−
0.038
−
mC
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