MMBT5087LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 µAdc, VCE = –5.0 Vdc)
(IC = –1.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
—
250
800
250
—
250
—
VCE(sat)
—
–0.3
Vdc
VBE(sat)
—
0.85
Vdc
Current–Gain — Bandwidth Product
(IC = –500 µAdc, VCE = –5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = –20 mAdc, VCE = –5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz)
(IC = –100 µAdc, VCE = –5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)
fT
40
—
MHz
Cobo
—
4.0
pF
hfe
250
900
—
NF
dB
—
2.0
—
2.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data