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K4B4G1646Q 데이터 시트보기 (PDF) - Samsung
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K4B4G1646Q
4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V
Samsung
K4B4G1646Q Datasheet PDF : 65 Pages
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65
K4B4G1646Q
datasheet
Preliminary
Rev. 0.5
DDR3L SDRAM
NOTE
:Clock and Strobe are drawn on a different time scale.
tIS
tIH
CK
CK
DQS
DQS
V
DDQ
tDS tDH
V
IH
(AC) min
V
IH
(DC) min
dc to V
REF
region
V
REF
(DC)
dc to V
REF
region
V
IL
(DC) max
tangent
line
V
IL
(AC) max
tIS tIH
tDS tDH
nominal
line
tangent
line
nominal
line
V
SS
TR
TF
Hold Slew Rate
Rising Signal
=
tangent line [ V
REF
(DC) - V
IL
(DC)max ]
TR
Hold Slew Rate
Falling Signal
=
tangent line [ V
IH
(DC)min - V
REF
(DC) ]
TF
Figure 27. Illustration of tangent line for hold time t
DH
(for DQ with respect to strobe) and t
IH
(for ADD/CMD with respect to clock)
- 65 -
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