2SC4993 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC4993

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4993

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

20

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

Note: Marking is “YS–”.

Symbol Min

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

fT

7.5

PG

13.5

NF

—

Typ Max Unit

—

10

µA

—

1

mA

—

10

µA

120 250

0.45 0.8 pF

10.5 —

GHz

16.5 —

dB

1.2 2.5 dB

Test conditions

VCB = 15 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 10 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 10 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2

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