BUP603D 데이터 시트보기 (PDF) - Siemens AG

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BUP603D

IGBT With Antiparallel Diode

Siemens AG 

BUP 603D

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 25 °C

60

A

50

17V

15V

IC

13V

45

11V

9V

40

7V

35

30

25

20

15

10

5

0

0

1

2

3

V

5

VCE

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 125 °C

60

A

50

17V

15V

IC

13V

45

11V

9V

40

7V

35

30

25

20

15

10

5

0

0

1

2

3

V

5

VCE

Typ. transfer characteristics

IC = f (VGE)

parameter: tp = 80 µs, VCE = 20 V

60

A

50

IC

45

40

35

30

25

20

15

10

5

0

0

2

4

6

8 10 V 14

VGE

Semiconductor Group

5

Dec-02-1996

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