2SK3541M3T5 데이터 시트보기 (PDF) - Willas Electronic Corp.

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2SK3541M3T5

SOT-723 Plastic-Encapsulate MOSFETS

Willas Electronic Corp. 

WILLAS

S1.0OA TSU-7RF2A3CEPMlOaUsNtTicSC-EHOnTcTKaYpBsAuRRlaIEtReREMCTOIFSIERFSE-2T0SV- 200V

SOD-123+ PACKAGE

FM120-M+

6.0TH7RU

FM1200-M+

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

Package outline

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

N• -LoCophwtimapnioznweeeblrolMaorsOds,sShpFiagEcheTe. fficiency.

F•EHAigThUcRurEreSnt capability, low forward voltage drop.

• High surge capability.

•zGuaLrdorwingofnor-roevseirsvtoaltnacgee protection.

•zUltraFhaisght -sswpeitecdhsinwgitcshpinege. d

••zLSeilaicdLo-onfrweeepviptoaaxlrtitaaslgmpeleaedntraeirvncevhirimpo,nammkeeetnastlatslhisliistcaondndejauvrnidccsetiooifnd.eal for portable equipment

zMIL-DSrTivDe-1c9i5r0c0u/i2ts28can be simple

•zRHoaHloSPgeapnrrofardeluleectpl fruoorsdpueacctiskfoinregpaacsocykdiengsucfofidxe"Gsu"ffix "H"

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

SOT-723

0.071(1.8)

0.056(1.4)

1. GATE

2. SOURCE

3. DRAIN

Mechanical data

A•PEPpLoIxCy A: UTLI9O4-NVS0 rated flame retardant

0.040(1.0)

0.024(0.6)

•InCtaesrefa:cMinoglde, dSpwlaitsctihc,inSgOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

0.031(0.8) Typ.

Method 2026

M• APRolaKriItNy G: In:KdiNcated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

KN • Weight : Approximated 0.011 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capPabci-tFivreeloeadp,adcekraategceurirsenat vbya2il0a%ble

RoHS produRcAt TfoINrGpSacking code suffiSxYM”GBO” L FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

MarkingHCaoldoegen free product for packing

Maximum Recurrent Peak Reverse Voltage

code suffix

VRRM

“12H20”

13

30

14

40

15

50

16

60

18

10

115 120

80

100

150

200 Volts

Maximum RMS Voltage

VRMS

14

21

28

35

42

56

70

105

140

Maximum*DACpBrolotcekcintigonVodltiaogdee is included between VthDeC gate a2n0d the s3o0urce te4rm0 inals t5o0protect60the diode80against1s0t0atic elec15tr0icity 200

MaximumwAhveernagtheeFoprrwoadrducRteicstifiineduCsuer.reUnst e a protectiIoOn circuit when the fixed voltages are exceed1e.0d.

Volts

Volts

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

30

sTuyppeicriaml pTMohseaerdxmoiamnl Rrauetesmdisltoaranadcte(JinE(NDgoEtseC 2(mT)eath=od2)5℃ unlessRΘoJtAherwise noted)

40

Amps

℃/W

Typical Junction Capacitance (Note 1)

CJ

120

PF

Operating Temperature Range

Parameter

TJ

-55Styom+1b2o5l

Value -55 to +150

Units

℃

StorageDTreaminp-esraotuurreceRavnogletage

Gate-sourcCeHAvRolAtaCgTeERISTICS

TSTG

VDS

- 65 to +175

30

℃

V

SYMBOL FM120-MH FM130V-MGSH FM140-MH FM150-MH FM160-M±H20FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

MaximumCoFnotriwnaurod uVsoldtargaeinatc1u.0rrAeDntC

VF

MaximuPmoAwveerragdeisRseipvaertsioenCurrent at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

Thermal resistance from junction to ambient

NOTES:

1- MeasuJreudnactt1ioMnHtZemanpdearpaptliuerdereverse voltage of 4.0 VDC.

2- ThermSaltRoerasigsteantceemFproemraJutuncretion to Ambient

ID0.50

PD

RθJA

TJ

Tstg

0.70 ±100 0.85

00..515

10

833

150

-55 ~+150

0.9 mA 0.92

W

℃/W

Volts

mAmps

℃

* Pw≤10µs ,Duty cycle≤1%

2012-06

2012-0

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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